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| 2SD2170 Transistors Medium Power Transistor (Motor, Relay drive) (90 +20 , 2A) -10 2SD2170 !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to "L" loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. !External dimensions (Units : mm) 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 0.5 (3) 4.5 1.6 (2) (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 1.5 0.4 ROHM : MPT3 EIAJ : SC-62 !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 90 90 6 2 3 2 150 -55~+150 +20 -10 +20 -10 Unit V V V A (DC) A (Pulse) W C C *1 *2 *1 *2 Single pulse Pw = 10ms , Duty = 1 / 2 When mounted on a 40 x 40 x 0.7 mm ceramic board. !Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SD2170 MPT3 1k~10k DM T100 1000 !Circuit diagram C 0.4 B R1 E : Emitter B : Base C : Collector R1 R2 R2 E 3.5k 300 !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE fT Cob Min. 80 80 1000 Typ. 80 25 Max. 110 110 10 3 1.5 10000 Unit V V A mA V MHz pF IC = 50A IC = 1mA VCB = 70V VEB = 5V IC/IB = 1A/1mA VCE = 2V , IC = 1A VCE = 5V , IE = -0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz Conditions *1 *1 *2 *1 Measured using pulse current. *2 Transition frequency of the device. 1.5 |
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